Corrosion resistance and electrical conductivity of plasma nitrided titanium

The continuous and dense Ti–N compound layers with a thickness ranging from 0.7 to 2.1 μm were formed on the titanium by plasma nitriding at 700 °C for different times with hollow cathode discharge assistance. Scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to characterize the nitrided layer. XRD and XPS results showed that the compound layer was mainly composed of Ti₂N phase. The corrosion current density of 4 h nitrided titanium was 0.016 μA/cm² (cathode) and 0.03 μA/cm² (anode), respectively. The electrical conductivity of samples was evaluated by means of the interfacial contact resistance (ICR). The value of 4 h nitrided titanium was 4.94 mΩ-cm² which was much lower than that of original titanium 26.25 mΩ-cm² under applied force of 150 Ncm^?2 after corrosion test. The results showed that the electrical conductivity and corrosion resistance of the titanium bipolar plates (BPs) were apparently improved with the formation of Ti₂N compound layer.     

Employing one-step coupling cold plasma and thermal polymerization approach to construct nitrogen defect-rich carbon nitrides toward efficient visible-light-driven hydrogen generation

Construction of structural defects in photocatalysts is a powerful tool for regulating their photocatalytic performance. In this work, we develop a facile one-step coupling cold plasma and thermal polymerization approach to synthesize a series of nitrogen defect-rich graphitic carbon nitrides (C₃N_4-x), which are used for visible-light-driven hydrogen generation from water. The nitrogen defect-induced band structure regulation of C₃N_4-x catalysts can be carried out through controlling the bombardment time and excitation power of generator during the plasma modification process. The defective C₃N_4-x catalysts have the extended visible light absorption and improved separation efficiency of photogenerated charge carriers, which results in the boosted hydrogen generation activity. Particularly, the optimal C₃N_4-x possesses a hydrogen generation rate of 2.46 mmol h^?1 g^?1, which is about 4.5 times higher than the pristine C₃N₄ synthesized by the single thermal polymerization of urea. The cold plasma modification-based one-step synthesis approach guides us for rationally designing defective nanomaterials with excellent catalytic performance.     

CO_2 conversion by thermal plasma with carbon as reducing agent: high CO yield and energy efficiency

A key problem in CO_2 conversion by thermal plasma is suppressing the inverse reactions,CO?+?O?→?CO_2 and CO?+?0.5O_2?→?CO_2, to simultaneously obtain high CO yield and energy efficiency. This can be done by quickly quenching the decomposed gas or rapidly taking away free oxygen from decomposed gas. In this paper, experiments of CO_2 conversion by thermal plasma with carbon as a reducing agent are presented. Carbon quickly devoured free oxygen in thermal plasma decomposed gas, and not only is the inverse reaction completely suppressed, but the discharge energy to form oxygen atoms, oxygen molecular, and thermal energy is also reused.A CO_2 conversion rate of 67%–94% and the corresponding electric energy efficiency of about 70% are achieved, both are much higher than that seen so far by other plasma implementations.     

Numerical modelling of a low power non-transferred arc plasma reactor for methane conversion

Thermal flow characteristics and the methane conversion reaction in a low power arc plasma reactor for efficient storage and transport of methane, which is the main component of shale gas, were simulated. The temperature and velocity distributions were calculated according to the type of discharge gases and arc current level by a self-developed magnetohydrodynamics (MHD) code and a commercial ANSYS-FLUENT code; the transport of chemical species was analyzed as including the chemical reactions of methane conversion. The simulated results were verified by the comparison of calculated and measured arc voltages with permissible low error as under 4%. Three C₂ hydrocarbon gases with ethane (C₂H₆), ethylene (C₂H₄), and acetylene (C₂H₂) were selected as the converted species of methane from experimental data. The mass fraction of C₂ hydrocarbons and hydrogen as the product of the conversion reaction at the reactor was also calculated. Those values show good agreement with the actual experimental results in that the major conversion reaction occurred in C₂H₂ and hydrogen, and the conversions to C₂H₆, C₂H₄, and hydrogen were minor reactions of methane pyrolysis conversion.     

Silicone-coated polyimide films deposited by surface dielectric barrier discharges

Hybrid dielectric barrier discharges are investigated for plasma generated on the surface of a dielectric layer, where two conducting electrodes of high voltage and ground are formulated on the upper and bottom surfaces. Using a flexible thin polyimide-film of a thickness ranging from 25 to 125 μm, a plasma is generated with a voltage of about 1 kV and a frequency of 40 kHz.However, the surface of the dielectric layer was etched through a chemical reaction involving plasma oxygen radical species, and thus the polyimide films failed readily, resulting in dielectric breakdown within short operating time ranging from a few minutes to several tens of minutes,based on the film thicknesses of 25 μm and 125 μm, respectively. These plasma erosions were prevented by coating the polyimide surface with a 25 μm thick silicone paste. The siliconecoated film surface was then reinforced remarkably against plasma erosion as the organic polymer was vulnerable to chemical reaction of the plasma species, while the inorganic silicone exhibited a high chemical resistance against plasma erosion.     

Relation between etching profile and voltage–current shape of sintered SiC etching by atmospheric pressure plasma

Sintered silicon carbide (SiC) was etched by a dielectric barrier discharge source. A high voltage bipolar pulse was used with helium gas for the plasma generation. One stable filament plasma was generated and could be used for SiC etching. As the processing gas (NF₃) mixing rate increased, the width and depth of the etching profile became narrower and deeper. The differentiated V–Q Lissajous method was used for measuring the capacitances (C_eq) of the electrode after the plasma turned on. The width of the etching profile was proportional to C_eq. As the current peak value I_smx of the substrate current increased, the volume removal rate of SiC increased. The etch depth was proportional to the ratio of I_smx to C_eq. Additionally, because of the different characteristics of the plasma disks on SiC substrate by the voltage polarity, the etching profile was unstable. However, in high NF₃ mixing process, the etching profile became stable and deeper.     

Influence of lanthanum on enhancement of mechanical and electrical properties of Cu-Al_2O_3 composites

Two kinds of Cu-Al_2O_3 composites(with and without La) were prepared via mechanical alloying-spark plasma sintering(MA-SPS) method. Microstructure, mechanical properties and electrical resistivity were investigated systematically using metallography, scanning electron microscopy, transmission electron microscopy, mechanical and electrical properties testing. The results indicate that an appropriate amount of La can homogenize the distribution of Al_2O_3. As such, yield strength, ultimate tensile strength and elongation of Cu-Al_2O_3-La are greatly increased. Some semi-coherent interface between Cu and Al_2O_3 is found, which means a low interface energy. The grain shape of Cu changes to irregular band with the addition of La. This change results in a density decrease of grain boundary and reduces electrical resistance. Lanthanum may exist in the form of La_2O_3.     

Influence of TiN dopant on microstructure of TiB2 ceramic sintered by spark plasma

In this study, the impact of TiN as a sintering aid on the relative density and microstructure of TiB₂ ceramic was investigated. Monolithic TiB₂ and TiB₂ doped with 5?wt% TiN were sintered at 1900?°C for 7?min dwell time under the pressure of 40?MPa by spark plasma. The addition of TiN affected the microstructure of TiB₂-based sample considerably depicting the finer grains in the as-sintered ceramic. X-ray diffraction evaluation indicated that no interaction occurred between the initial materials. However, detail investigation by the map analysis and energy dispersive spectroscopy results revealed the formation of in-situ nano-sized hBN secondary phase in the TiN-doped TiB₂. In addition, TiN played a remarkable role on increasing the relative density of TiN-doped TiB₂ ceramic producing a nearly fully dense ceramic with relative density of 99.9% in comparison with the monolithic ceramic having 96.7% relative density.